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QS5U13
Transistors
Small switching (30V, 2.0A)
QS5U13
Features 1) The QS5U13 combines Nch MOSFET with a Schottky barrier diode in a single TSMT5 package. 2) Nch MOSFET have a low on-state resistance with a fast switching. 3) Nch MOSFET is reacted a low voltage drive (2.5V). 4) The Independently connected Schottky barrier diode have a low forward voltage. External dimensions (Unit : mm)
1.0MAX 0.850.1 0.70.1
(4)
(5)
2.80.2
1.6 0.2 0.1
0 to 0.1
(1) (2) (3)
0.4 +0.1 -0.05
0.16 +0.1 -0.06 Each lead has same dimensions
Applications Load switch, DC / DC conversion
Abbreviated symbol : U13
Structure Silicon N-channel MOSFET Schottky Barrier DIODE
Equivalent circuit
(5) (4)
Packaging specifications
Package Type QS5U13 Code Basic ordering unit (pieces) Taping TR 3000
(1)
2
1 (2) (3)
1 ESD PROTECTION DIODE 2 BODY DIODE
(1) Anode (2) Source (3) Gate (4) Drain (5) Cathode
0.3 to 0.6
2.90.1 1.90.2 0.95 0.95
1/4
QS5U13
Transistors
Absolute maximum ratings (Ta=25C)
Parameter Drain-source voltage Gate-source voltage Drain current Source current (Body diode) Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IS ISP Tch VRM VR IF IFSM Tj PD Tstg Limits 30 12 2.0 8.0 0.8 3.2 150 30 20 0.5 2.0 125 1.0 -50 to 150 Unit V V A A Pw10s, Duty cycle1% A A Pw10s, Duty cycle1% C V V A A C
Channel temperature Repetitive peak reverse voltage Reverse voltage Forward current Forward current surge peak Junction temperature Total power dissipation Range of Storage temperature
60Hz 1cyc.
W / Total / Mounted on a ceramic board C
Electrical characteristics (Ta=25C)
Parameter Symbol Gate-source leakage IGSS Drain-source breakdown voltage V(BR) DSS Zero gate voltage drain current IDSS Gate threshold voltage VGS (th) Static drain-source on-state resistance Forward transfer admittance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Total gate charge Gate-source charge Gate-drain charge
Pulsed
RDS (on)
Yfs Ciss Coss Crss td (on) tr td (off) tf Qg Qgs Qgd
Min. - 30 - 0.5 - - - 1.5 - - - - - - - - - -
Typ. - - - - 71 76 110 - 175 50 25 8 10 21 8 2.8 0.6 0.8
Max. 10 - 1 1.5 100 107 154 - - - - - - - - 3.9 - -
Unit A V A V m m m S pF pF pF ns ns ns ns nC nC nC
Conditions VGS=12V / VDS=0V ID=1mA, / VGS=0V VDS=30V / VGS=0V VDS=10V / ID=1mA ID=2.0A, VGS=4.5V ID=2.0A, VGS=4V ID=2.0A, VGS=2.5V VDS=10V, ID=2.0A VDS=10V VGS=0V f=1MHz ID=1.0A VDD 15V VGS=4.5V RL=15 RGS=10 VDD 15V VGS=4.5V ID=2.0A
Body diode (source-drain) VSD Forward voltage Forward voltage Reverse leakage VF IR
- - -
- - -
1.2 0.47 100
V V A
IS=3.2A / VGS=0V IF=0.5A VR=20V
2/4
QS5U13
Transistors
Electrical characteristic curves
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
VDS=10V Pulsed
VGS=4.5V Pulsed
Ta=125C Ta=75C Ta=25C Ta= -25C
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
10
1000
1000 VGS=4.0V Pulsed
Ta=125C Ta=75C Ta=25C Ta= -25C
DRAIN CURRENT : ID (A)
1
Ta=125C Ta=75C Ta=25C Ta= -25C
0.1
100
100
0.01
0.001 0.0
0.5
1.0
1.5
2.0
2.5
10 0.1
1
10
10 0.1
1
10
GATE-SOURCE VOLTAGE : VGS (V)
DRAIN CURRENT : ID (A)
DRAIN CURRENT : ID (A)
Fig.1 Typical Transfer Characteristics
Fig.2 Static Drain-Source On-State Resistance vs. Drain Current
Fig.3 Static Drain-Source On-State Resistance vs. Drain Current
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS (on) (m)
1000
Ta=125C Ta=75C Ta=25C Ta= -25C
VGS=2.5V Pulsed
300 Ta=25C Pulsed
1000 Ta=25C Pulsed
200
ID=2A ID=1A
VGS=2.5V VGS=4V VGS=4.5V
100
100
100
10 0.1
1
10
0
0
1
2
3
4
5
6
7
8
9
10
10 0.1
1
10
DRAIN CURRENT : ID (A)
GATE-SOURCE VOLTAGE : VGS (V)
DRAIN CURRENT : ID (A)
Fig.4 Static Drain-Source On-State Resistance vs. Drain Current
Fig.5 Static Drain-Source On-State Resistance vs. Gate-Source Voltage
Fig.6 Static Drain-Source On-State Resistance vs. Drain Current
10
1000
Ta=125C Ta=75C Ta=25C Ta= -25C
VGS=0V Pulsed
SOURCE CURRENT : IS (A)
Ta=25C f=1MHz VGS=0V
1000
SWITCHING TIME : t (ns)
CAPACITANCE : C (pF)
1
100
tf
Ta=25C VDD=15V VGS=4.5V RG=10 Pulsed
Ciss
100
td (off) td (on) tr
0.1
10
Coss Crss
0.01 0.0
0.5
1.0
1.5
10 0.01
0.1
1
10
100
1 0.01
0.1
1
10
SOURCE-DRAIN VOLTAGE : VSD (V)
DRAIN-SOURCE VOLTAGE : VDS (V)
DRAIN CURRENT : ID (A)
Fig.7 Reverse Drain Current vs. Source-Drain Current
Fig.8 Typical Capacitance vs. Drain-Source Voltage
Fig.9 Switching Characteristics
3/4
QS5U13
Transistors
6
1000
100
GATE-SOURCE VOLTAGE : VGS (V)
FORWARD CURRENT : IF (mA)
REVERSE CURRENT : IR (mA)
Ta=25C VDD=15V 5 ID=2A RG=10 Pulsed 4 3 2 1 0
100
125C 75C 25C -25C
10 1 0.1
125C
75C
10
25C
0.01 0.001
-25C
1
0
1
2
3
0.1
0
0.1
0.2
0.3
0.4
0.5
0.0001
0
10
20
30
40
TOTAL GATE CHARGE : Qg (nC)
FORWARD VOLTAGE : VF (V)
REVERSE VOLTAGE : VR (V)
Fig.10 Dynamic Input Characteristics
Fig.11 Forward Current vs. Forward Voltage
Fig.12 Reverse Current vs. Reverse Voltage
Measurement circuits
Pulse Width 90%
VGS ID RL D.U.T. RG VDD VDS
VGS VDS
50% 10% 10%
50%
10% 90% 90% td(off) tf toff
td(on) ton
tr
Fig.13 Switching Time Measurement Circuit
Fig.14 Switching Waveforms
VG
VGS ID RL D.U.T. RG VDD VDS
Qg VGS Qgs Qgd
IG(Const.)
Charge
Fig.15 Gate Charge Measurement Circuit
Fig.16 Gate Charge Waveform
4/4
Appendix
Notes
No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). Should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. About Export Control Order in Japan Products described herein are the objects of controlled goods in Annex 1 (Item 16) of Export Trade Control Order in Japan. In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction.
Appendix1-Rev1.0

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